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MOSFET 150V 1 x N-CH HEXFET for Digital Audio ,TR IRF6775MTR1PBF-S
Manufacturer: Infineon
Product Category: MOSFET
Technology: Si
Mounting Style: SMD/SMT
Package/Case: DirectFET-MZ
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds - Drain-Source Breakdown Voltage: 150 V
Id - Continuous Drain Current: 28 A
Rds On - Drain-Source Resistance: 47 mOhms
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage: 5 V
Qg - Gate Charge: 25 nC
Maximum Operating Temperature: + 150 C
Pd - Power Dissipation: 89 W
Brand: Infineon Technologies
Configuration: Single
Fall Time: 15 ns
Forward Transconductance - Min: 11 S
Height: 0.7 mm
Length: 6.35 mm
Moisture Sensitive: Yes
Product Type: MOSFET
Rise Time: 7.8 ns
Subcategory: MOSFETs
Transistor Type: 1 N-Channel
Width: 5.05 mm
Part # Aliases: SP001551188
Unit Weight: 500 mg
MOS-N-FET , 150V ,28A ,25nS, 89W , +150°C ,SMD-DirectFET-MZ ,Infineon Technologies IRF6775MTR1PBF-S for Digital Audio, Sony
- Фабричен номер: 6-553-827-01
- Производител SONY
- Само с доставка от 3 до 15 раб. дни в стандартните случаи.
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30.00 лв.
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