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FDS4935 FET-SILICON;FDS4935,P,-30V,-7A,0.019OHM ,0505-001803 Samsung
Manufacturer: onsemi
Product Category: MOSFET
Technology: Si
Mounting Style: SMD/SMT
Package/Case: SOIC-8
Transistor Polarity: P-Channel
Number of Channels: 2 Channel
Vds - Drain-Source Breakdown Voltage: 30 V
Id - Continuous Drain Current: 7 A
Rds On - Drain-Source Resistance: 23 mOhms
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage: 3 V
Qg - Gate Charge: 21 nC
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 175 C
Pd - Power Dissipation: 2 W
Channel Mode: Enhancement
Tradename: PowerTrench
Configuration: Dual
Fall Time: 25 ns
Forward Transconductance - Min: 19 S
Height: 1.75 mm
Length: 4.9 mm
Product Type: MOSFET
Rise Time: 10 ns
Series: FDS4935A
Subcategory: MOSFETs
Transistor Type: 2 P-Channel
Type: MOSFET
Typical Turn-Off Delay Time: 48 ns
Typical Turn-On Delay Time: 13 ns
Width: 3.9 mm
Part # Aliases: FDS4935A_NL
Unit Weight: 187 mg
MOSFET,Dual 2xP ch.,LogL,30V,7A,23mom(5.5A),1.6/2W,8-MDIP,Fairchild FDS4935A
- Фабричен номер: FDS 4935
- Производител Fairchild
- Само с доставка от 3 до 15 раб. дни в стандартните случаи.
-
3.00 лв.
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