2xSi-N,Dual, 60V,0.15A,0.3W,180MHz,6-SOP Rohm IMX1 ,code:X1 ,8-729-907-27 SONY IMX1T110
2xSi-N,Dual, 60V,0.15A,0.4W,180MHz,6-SOP Rohm IMX1 ,code:X1 ,8-729-907-27 ,8-729-907-26 SONY IMX1T110
Manufacturer: ROHM Semiconductor
Product Category: Bipolar Transistors - BJT
Mounting Style: SMD/SMT
Transistor Polarity: NPN
Configuration: Dual
Collector- Emitter Voltage VCEO Max: 50 V
Collector- Base Voltage VCBO: 60 V
Emitter- Base Voltage VEBO: 7 V
Collector-Emitter Saturation Voltage: 400 mV
Maximum DC Collector Current: 150 mA
Pd - Power Dissipation: 300 mW
Gain Bandwidth Product fT: 180 MHz
Minimum Operating Temperature: -
Maximum Operating Temperature: + 150 C
Series: IMX1
Brand: ROHM Semiconductor
Continuous Collector Current: 150 mA
DC Collector/Base Gain hFE Min: 120
DC Current Gain hFE Max: 560
Height: 1.1 mm
Length: 2.9 mm
Product Type: BJTs - Bipolar Transistors
Width: 1.6 mm
Part # Aliases: IMX1
Unit Weight: 12 mg