Каталожен номер: 175352
Снимките на продуктите са с илюстративно предназначение и могат да се различават от действителния изглед на предмета.
Това обаче не променя техните основни свойства.-
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2 x Channel, MOS-N-FET,L,100V,11A, 18W, 0.072oHm(5.8A)<12nS, -55..+150°C ,TO-220F/5 , Infineon IRFI4212H-117PXKMA1
Manufacturer: Infineon
Product Category: MOSFET
Technology: Si
Mounting Style: Through Hole
Transistor Polarity: N-Channel
Number of Channels: 2 Channel
Vds - Drain-Source Breakdown Voltage: 100 V
Id - Continuous Drain Current: 11 A
Rds On - Drain-Source Resistance: 72.5 mOhms
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage: 5 V
Qg - Gate Charge: 12 nC
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C
Pd - Power Dissipation: 18 W
Channel Mode: Enhancement
Brand: Infineon Technologies
Product Type: MOSFET
Subcategory: MOSFETs
Part # Aliases: IRFI4212H-117P SP005547285
Manufacturer: Infineon
Product Category: MOSFET
Technology: Si
Mounting Style: Through Hole
Transistor Polarity: N-Channel
Number of Channels: 2 Channel
Vds - Drain-Source Breakdown Voltage: 100 V
Id - Continuous Drain Current: 11 A
Rds On - Drain-Source Resistance: 72.5 mOhms
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage: 5 V
Qg - Gate Charge: 12 nC
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C
Pd - Power Dissipation: 18 W
Channel Mode: Enhancement
Brand: Infineon Technologies
Product Type: MOSFET
Subcategory: MOSFETs
Part # Aliases: IRFI4212H-117P SP005547285
2 x Channel, MOS-N-FET,L,100V,11A, 18W, 0.072oHm(5.8A)<12nS, -55..+150°C ,TO-220F/5 , Infineon IRFI4212H-117PXKMA1
- Фабричен номер: IRFI 4212 H
- Производител Infineon
- Само с доставка от 3 до 15 раб. дни в стандартните случаи.
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10.80 лв.