HEXFET,Power MOS-N-FET,40V,42-119A,140W,<0.055om(42A),TO-252/D-Pak ,Infineon IRFR4104TRPBF ,code: FR4104
IRFU4104 Automotive MOSFET
Manufacturer: Infineon
Product Category: MOSFET
Technology: Si
Mounting Style: SMD/SMT
Package/Case: TO-252-3
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds - Drain-Source Breakdown Voltage: 40 V
Id - Continuous Drain Current: 119 A
Rds On - Drain-Source Resistance: 5.5 mOhms
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage: 4 V
Qg - Gate Charge: 89 nC
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 175 C
Pd - Power Dissipation: 140 W
Channel Mode: Enhancement
Brand: Infineon Technologies
Configuration: Single
Fall Time: 36 ns
Forward Transconductance - Min: 58 S
Height: 2.3 mm
Length: 6.5 mm
Product Type: MOSFET
Rise Time: 69 ns
Subcategory: MOSFETs
Transistor Type: 1 N-Channel
Width: 6.22 mm
Unit Weight: 330 mg