MOS-N-FET,80V,50A,150W,<22mom(50A),TO-220 ,STP50NE08 STMicroelectronics Manufacturer: STMicroelectronics Product Category: MOSFET RoHS: N Technology: Si Mounting Style: Through Hole Package/Case: TO-220-3 Transistor Polarity: N-Channel Number of Channels: 1 Channel Vds - Drain-Source Breakdown Voltage: 80 V Id - Continuous Drain Current: 50 A Rds On - Drain-Source Resistance: 20 mOhms Vgs - Gate-Source Voltage: - 20 V, + 20 V Minimum Operating Temperature: - 65 C Maximum Operating Temperature: + 175 C Pd - Power Dissipation: 150 W Channel Mode: Enhancement Packaging: Tube Configuration: Single Height: 9.15 mm Length: 10.4 mm Series: STP50NE08 Transistor Type: 1 N-Channel Type: MOSFET Width: 4.6 mm Brand: STMicroelectronics Forward Transconductance - Min: 35 S Fall Time: 30 ns Product Type: MOSFET Rise Time: 95 ns Subcategory: MOSFETs Typical Turn-On Delay Time: 37 ns Unit Weight: 2 g