MOS-FET-N-Channel, 600V,47/29.7A,417W,<0.073om(23.5A),270nS,TO-3PN-3,ONsemiconductors FCN47N60 ONsemiconductors FCN47N60 FCA47N60 MOSFET, N CH, 600V, 47A, TO-3PN,MOSFETs 650V SUPER FET Manufacturer: onsemi Product Category: MOSFETs RoHS: Technology: Si Mounting Style: Through Hole Package/Case: TO-3PN-3 Transistor Polarity: N-Channel Number of Channels: 1 Channel Vds - Drain-Source Breakdown Voltage: 600 V Id - Continuous Drain Current: 47 A Rds On - Drain-Source Resistance: 70 mOhms Vgs - Gate-Source Voltage: - 30 V, 30 V Vgs th - Gate-Source Threshold Voltage: 3 V Qg - Gate Charge: 270 nC Minimum Operating Temperature: - 55 C Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 417 W Channel Mode: Enhancement Tradename: SuperFET Packaging: Tube Brand: onsemi Configuration: Single Fall Time: 75 ns Forward Transconductance - Min: 40 S Height: 20.1 mm Length: 16.2 mm Product Type: MOSFETs Rise Time: 210 ns Series: FCA47N60 30 Subcategory: Transistors Transistor Type: 1 N-Channel Type: N-Channel MOSFET Typical Turn-Off Delay Time: 520 ns Typical Turn-On Delay Time: 185 ns Width: 5 mm Unit Weight: 4,600 g