MOS-N-FET,100V,51A,150W,<25mom(28A),67nS,TO-220,IR IRF3710 Infineon / IR
IRF3710/IR,532P,2D 78,Metal oxide N-channel FET, enhancement type;IRFP3710PBF MOSFET MOSFT 100V 51A 25mOhm 66.7nCAC
Manufacturer: Infineon
Product Category: MOSFET
Technology: Si
Mounting Style: Through Hole
Package/Case: TO-247-3
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds - Drain-Source Breakdown Voltage: 100 V
Id - Continuous Drain Current: 51 A
Rds On - Drain-Source Resistance: 25 mOhms
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage: 1.8 V
Qg - Gate Charge: 66.7 nC
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 175 C
Pd - Power Dissipation: 180 W
Channel Mode: Enhancement
Brand: Infineon / IR
Configuration: Single
Height: 20.7 mm
Length: 15.87 mm
Product Type: MOSFET
Subcategory: MOSFETs
Transistor Type: 1 N-Channel
Width: 5.31 mm
Part # Aliases: IRFP3710PBF SP001552026
Unit Weight: 6 g