Каталожен номер: 171835
Снимките на продуктите са с илюстративно предназначение и могат да се различават от действителния изглед на предмета.
Това обаче не променя техните основни свойства.
MOS-N-FET,100V,59A,200W,<0.025om(32A),75nS,TO-220,IRFB59N10DPBF Infineon (IRF)
IInfineon (IRF) IRFB59N10DPBF MOSFET,N TO-220 100V 59A
Manufacturer: Infineon
Product Category: MOSFET
Technology: Si
Mounting Style: Through Hole
Package/Case: TO-220-3
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds - Drain-Source Breakdown Voltage: 100 V
Id - Continuous Drain Current: 59 A
Rds On - Drain-Source Resistance: 32 mOhms
Vgs - Gate-Source Voltage: - 30 V, + 30 V
Qg - Gate Charge: 76 nC
Pd - Power Dissipation: 200 W
Configuration: Single
Height: 15.65 mm
Length: 10 mm
Transistor Type: 1 N-Channel
Width: 4.4 mm
Brand: Infineon / IR
Product Type: MOSFET
Subcategory: MOSFETs
Unit Weight: 2 g
IInfineon (IRF) IRFB59N10DPBF MOSFET,N TO-220 100V 59A
Manufacturer: Infineon
Product Category: MOSFET
Technology: Si
Mounting Style: Through Hole
Package/Case: TO-220-3
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds - Drain-Source Breakdown Voltage: 100 V
Id - Continuous Drain Current: 59 A
Rds On - Drain-Source Resistance: 32 mOhms
Vgs - Gate-Source Voltage: - 30 V, + 30 V
Qg - Gate Charge: 76 nC
Pd - Power Dissipation: 200 W
Configuration: Single
Height: 15.65 mm
Length: 10 mm
Transistor Type: 1 N-Channel
Width: 4.4 mm
Brand: Infineon / IR
Product Type: MOSFET
Subcategory: MOSFETs
Unit Weight: 2 g
MOS-N-FET,100V,59A,200W,<0.025om(32A),75nS,TO-220,IRFB59N10DPBF Infineon (IRF)
- Фабричен номер: IRFB 59N10 D
- Производител IR
- Само с доставка от 3 до 15 раб. дни в стандартните случаи.
-
9.60 лв.
Свързани продукти
Фабричен номер: : IRFB 52N15 D
MOS-N-FET,150V,60A,320W,<0.032om(35A),60nS,TO-220,IRFB52N15DPBF Infineon (IRF),code:FB52N15D
MOS-N-FET,150V,60A,320W,..
9.60 лв.