MOS-N-FET,150V,28A,47mOm,25nS,89W,DirectFET-MZ,SMD-Isometric IRF6775MTRPBF Infineon ,for Digital Audio, Sony
MOSFET 150V 1 x N-CH HEXFET for Digital Audio ,TR IRF6775MTR1PBF,6-552-698-01 ,6-553-827-01 for SONY
Manufacturer: Infineon
Product Category: MOSFET
Technology: Si
Mounting Style: SMD/SMT
Package/Case: DirectFET-MZ
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds - Drain-Source Breakdown Voltage: 150 V
Id - Continuous Drain Current: 28 A
Rds On - Drain-Source Resistance: 47 mOhms
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage: 1.8 V
Qg - Gate Charge: 25 nC
Minimum Operating Temperature: - 40 C
Maximum Operating Temperature: + 150 C
Pd - Power Dissipation: 89 W
Channel Mode: Enhancement
Tradename: DirectFET
Configuration: Single
Height: 0.7 mm
Length: 6.35 mm
Transistor Type: 1 N-Channel
Width: 5.05 mm
Brand: Infineon / IR
Fall Time: 15 ns
Product Type: MOSFET
Rise Time: 7.8 ns
Subcategory: MOSFETs
Typical Turn-Off Delay Time: 5.8 ns
Typical Turn-On Delay Time: 5.9 ns
Unit Weight: 304,750 mg