MOS-N-FET,200V, 65A,330W,<0.24mOhm(45A),70nS ,TO-220, IRFB4227 Infineon (IRF)
Transistor IRFB4227PBF MOSFET 200V 65A 26mOhm 70nC Qg Infineon Technologies
Manufacturer: Infineon
Product Category: MOSFET
Technology: Si
Mounting Style: Through Hole
Package/Case: TO-220-3
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds - Drain-Source Breakdown Voltage: 200 V
Id - Continuous Drain Current: 65 A
Rds On - Drain-Source Resistance: 24 mOhms
Vgs - Gate-Source Voltage: - 30 V, + 30 V
Vgs th - Gate-Source Threshold Voltage: 1.8 V
Qg - Gate Charge: 70 nC
Minimum Operating Temperature: - 40 C
Maximum Operating Temperature: + 175 C
Pd - Power Dissipation: 330 W
Brand: Infineon Technologies
Configuration: Single
Fall Time: 31 ns
Forward Transconductance - Min: 49 S
Height: 15.65 mm
Length: 10 mm
Product Type: MOSFET
Rise Time: 20 ns
Subcategory: MOSFETs
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 21 ns
Typical Turn-On Delay Time: 33 ns
Width: 4.4 mm
Part # Aliases: IRFB4227PBF SP001565892
Unit Weight: 2 g