MOS-N-FET,30V,171A,125W,<2.4mom(68A),TO-220,IR-Infineon IRLB8314PBF
IR-Infineon IRLB8314PBF MOSFET Transistor, N Channel, 130A, 30V, 2.4 mohm, TO-220
Product Category: MOSFET
RoHS: Details
Technology: Si
Mounting Style: Through Hole
Package/Case: TO-220-3
Transistor Polarity: N-Channel
Vds - Drain-Source Breakdown Voltage: 30 V
Id - Continuous Drain Current: 171 A
Rds On - Drain-Source Resistance: 1.9 mOhms
Vgs th - Gate-Source Threshold Voltage: 1.7 V
Vgs - Gate-Source Voltage: 20 V
Qg - Gate Charge: 40 nC
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 175 C
Pd - Power Dissipation: 125 W
Configuration: Single
Channel Mode: Enhancement
Height: 15.65 mm
Length: 10 mm
Width: 4.4 mm
Brand: Infineon Technologies
Forward Transconductance - Min: 307 S
Fall Time: 72 ns
Product Type: MOSFET
Rise Time: 142 ns
Subcategory: MOSFETs
Typical Turn-Off Delay Time: 32 ns
Typical Turn-On Delay Time: 19 ns
Part # Aliases: SP001572766
Unit Weight: 6 g