Каталожен номер: 155804
Снимките на продуктите са с илюстративно предназначение и могат да се различават от действителния изглед на предмета.
Това обаче не променя техните основни свойства.
MOS-N-FET,50V,13.5A,40W,<125mom(7.5A),48/75uS,TO-220 Metal oxide N-channel FET, enhancement types,=BUK 100-50DL: 9,5/10,5µs Manufacturer: NXP Product Category: MOSFET RoHS: RoHS Compliant Details Brand: NXP Semiconductors Mounting Style: Through Hole Package / Case: TO-220-3 Number of Channels: 1 Channel Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 50 V Id - Continuous Drain Current: 13.5 A Rds On - Drain-Source Resistance: 125 mOhms Maximum Operating Temperature: + 150 C Channel Mode: Enhancement Configuration: Single Fall Time: 4.5 ns, 0.5 ns Minimum Operating Temperature: - 55 C Pd - Power Dissipation: 40 W Rise Time: 8 ns, 1 ns Factory Pack Quantity: 50 Transistor Type: 1 N-Channel Typical Turn-Off Delay Time:6 ns, 10 ns Typical Turn-On Delay Time:1.5 ns Part # Aliases:BUK100-50GL,127
MOS-N-FET,50V,13.5A,40W,<125mom(7.5A),48/75uS,TO-220
- Фабричен номер: BUK 100-50 DL
- Производител Philips
- Само с доставка от 3 до 15 раб. дни в стандартните случаи.
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6.00 лв. / 3.12€
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Фабричен номер: : IRFZ 20 P
N-MOSFET,50V,15A,40W,0.1om(10A),TO-220
N-MOSFET,50V,15A,40W,0.1om(10A),TO-220 Transistor Polarity N Channel Continuous Drain Current Id 15..
6.60 лв. / 3.43€