MOS-N-FET,600V,0.3A, 3W,<15om(0.4A), 41nS,TO-92, STQ1NK60ZR STMicroelectronics
Manufacturer: STMicroelectronics
Product Category: MOSFETs
Technology: Si
Mounting Style: Through Hole
Package/Case: TO-92-3
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds - Drain-Source Breakdown Voltage: 600 V
Id - Continuous Drain Current: 300 mA
Rds On - Drain-Source Resistance: 15 Ohms
Vgs - Gate-Source Voltage: - 30 V, + 30 V
Vgs th - Gate-Source Threshold Voltage: 3 V
Qg - Gate Charge: 4.9 nC
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C
Pd - Power Dissipation: 3 W
Channel Mode: Enhancement
Tradename: SuperMESH
Series: STQ1NK60ZR
Packaging: Ammo Pack
Brand: STMicroelectronics
Configuration: Single
Fall Time: 28 ns
Forward Transconductance - Min: 0.5 S
Product Type: MOSFETs
Rise Time: 5 ns
Transistor Type: 1 N-Channel Power MOSFET
Typical Turn-Off Delay Time: 13 ns
Typical Turn-On Delay Time: 5.5 ns
Unit Weight: 453,600 mg