Каталожен номер: 175983
Снимките на продуктите са с илюстративно предназначение и могат да се различават от действителния изглед на предмета.
Това обаче не променя техните основни свойства.-
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MOS-N-FET,60V,160A,230W,<3.3mOm(75A),TO-220 ,Infineon Technologies IRFB3306PBF
Manufacturer: Infineon
Product Category: MOSFET
Technology: Si
Mounting Style: Through Hole
Package/Case: TO-220-3
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds - Drain-Source Breakdown Voltage: 60 V
Id - Continuous Drain Current: 160 A
Rds On - Drain-Source Resistance: 3.3 mOhms
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage: 1.8 V
Qg - Gate Charge: 85 nC
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 175 C
Pd - Power Dissipation: 230 W
Channel Mode: Enhancement
Brand: Infineon Technologies
Configuration: Single
Height: 15.65 mm
Length: 10 mm
Product Type: MOSFET
Subcategory: MOSFETs
Transistor Type: 1 N-Channel
Width: 4.4 mm
Unit Weight: 2 g
Manufacturer: Infineon
Product Category: MOSFET
Technology: Si
Mounting Style: Through Hole
Package/Case: TO-220-3
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds - Drain-Source Breakdown Voltage: 60 V
Id - Continuous Drain Current: 160 A
Rds On - Drain-Source Resistance: 3.3 mOhms
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage: 1.8 V
Qg - Gate Charge: 85 nC
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 175 C
Pd - Power Dissipation: 230 W
Channel Mode: Enhancement
Brand: Infineon Technologies
Configuration: Single
Height: 15.65 mm
Length: 10 mm
Product Type: MOSFET
Subcategory: MOSFETs
Transistor Type: 1 N-Channel
Width: 4.4 mm
Unit Weight: 2 g
MOS-N-FET,60V,160A,230W,<3.3mOm(75A),TO-220 ,Infineon Technologies IRFB3306PBF
- Фабричен номер: IRFB 3306
- Производител Infineon
- Само с доставка от 3 до 15 раб. дни в стандартните случаи.
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4.50 лв.
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