Каталожен номер: 67044

Снимките на продуктите са с илюстративно предназначение и могат да се различават от действителния изглед на предмета.
Това обаче не променя техните основни свойства.

MOS-N-FET,800V,4A,35W,<3.3om(2A),TO-220F, STM STP4NB80FP
STP4NB80FP,STP4NA60FI ,STP4NK80ZFP

Mesh Overlay Power Amplifier, 800V 4A 35W
Manufacturer: STMicroelectronics
Product Category: MOSFET
RoHS: Details
Technology: Si
Mounting Style: Through Hole
Package/Case: TO-220-3
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds - Drain-Source Breakdown Voltage: 800 V
Id - Continuous Drain Current: 4 A
Rds On - Drain-Source Resistance: 3.3 Ohms
Vgs - Gate-Source Voltage: - 30 V, + 30 V
Minimum Operating Temperature: - 65 C
Maximum Operating Temperature: + 150 C
Pd - Power Dissipation: 35 W
Channel Mode: Enhancement
Configuration: Single
Height: 9.15 mm
Length: 10.4 mm
Series: STP4NB80F
Transistor Type: 1 N-Channel
Width: 4.6 mm
Brand: STMicroelectronics
Fall Time: 9 ns
Product Type: MOSFET
Rise Time: 8 ns
Typical Turn-On Delay Time: 14 ns
Unit Weight: 330 mg