Каталожен номер: 163078
Снимките на продуктите са с илюстративно предназначение и могат да се различават от действителния изглед на предмета.
Това обаче не променя техните основни свойства.
MOS-N-FET,L,600V,2.6A,36W,<2.2om(2A),TO-220F,FQPF4N60 Fairchild Manufacturer: ON Semiconductor Product Category: MOSFET RoHS: Details Technology: Si Mounting Style: Through Hole Package/Case: TO-220-3 Number of Channels: 1 Channel Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 600 V Id - Continuous Drain Current: 2.6 A Rds On - Drain-Source Resistance: 2.2 Ohms Vgs - Gate-Source Voltage: 30 V Minimum Operating Temperature: - 55 C Maximum Operating Temperature: + 150 C Configuration: Single Pd - Power Dissipation: 36 W Channel Mode: Enhancement Height: 16.3 mm Length: 10.67 mm Transistor Type: 1 N-Channel Type: MOSFET Width: 4.7 mm Brand: ON Semiconductor / Fairchild Forward Transconductance - Min: 3.1 S Fall Time: 35 ns Product Type: MOSFET Rise Time: 45 ns Subcategory: MOSFETs Typical Turn-Off Delay Time: 25 ns Typical Turn-On Delay Time: 13 ns Unit Weight: 2,125 g
MOS-N-FET,L,600V,2.6A,36W,<2.2om(2A),TO-220F,FQPF4N60 Fairchild
- Фабричен номер: FQPF 4N60 C
- Производител Fairchild
- Само с доставка от 3 до 15 раб. дни в стандартните случаи.
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4.20 лв.
Свързани продукти
Фабричен номер: : 2N60L-TF3-T
MOS-N-FET,L,600V,2.0A,23W,<3.6om(1A),TO-220F,2N60H47L UTC
MOS-N-FET,L,600V,2.0A,23W,..
2.40 лв.