MOS-N-FET,LogL,200V,9.8A,40W,<0,18om,TO-220F Fairchild,IRLS640A Manufacturer: ON Semiconductor Product Category: MOSFET RoHS: Details Technology: Si Mounting Style: Through Hole Package/Case: TO-220FP-3 Number of Channels: 1 Channel Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 200 V Id - Continuous Drain Current: 9.8 A Rds On - Drain-Source Resistance: 180 mOhms Vgs - Gate-Source Voltage: 20 V Minimum Operating Temperature: - 55 C Maximum Operating Temperature: + 150 C Configuration: Single Pd - Power Dissipation: 40 W Channel Mode: Enhancement Height: 16.07 mm Length: 10.36 mm Series: IRLS640A Transistor Type: 1 N-Channel Type: MOSFET Width: 4.9 mm Brand: ON Semiconductor / Fairchild Forward Transconductance - Min: 13.3 S Fall Time: 15 ns Product Type: MOSFET Rise Time: 8 ns Factory Pack Quantity: 1000 Subcategory: MOSFETs Typical Turn-Off Delay Time: 46 ns Typical Turn-On Delay Time: 11 ns Unit Weight: 2,270 g