MOS-N-FET,Opti-MOS,75V,80A,150W,0.052om(80A),51nS,TO-220,code:052NE7N , Infineon IPP052NE7N3 G
Infineon IPP052NE7N3 G MOSFET N-Ch 75V 80A TO220-3 OptiMOS 3
Manufacturer: Infineon
Product Category: MOSFET
Technology: Si
Mounting Style: Through Hole
Package/Case: TO-220-3
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds - Drain-Source Breakdown Voltage: 75 V
Id - Continuous Drain Current: 80 A
Rds On - Drain-Source Resistance: 5.2 mOhms
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage: 3.1 V
Qg - Gate Charge: 51 nC
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 175 C
Pd - Power Dissipation: 150 W
Channel Mode: Enhancement
Tradename: OptiMOS
Brand: Infineon Technologies
Configuration: Single
Fall Time: 8 ns
Forward Transconductance - Min: 103 S, 52 S
Height: 15.65 mm
Length: 10 mm
Product Type: MOSFET
Rise Time: 11 ns
Series: OptiMOS 3
Subcategory: MOSFETs
Transistor Type: 1 N-Channel
Type: OptiMOS 3 Power-Transistor
Typical Turn-Off Delay Time: 30 ns
Typical Turn-On Delay Time: 14 ns
Width: 4.4 mm
Part # Aliases: SP000641726 IPP52NE7N3GXK IPP052NE7N3GXKSA1
Unit Weight: 2 g