MOS-N-FET,Power MOSFET,650V,24.3A,240W,<160mOm(18A),TO-247,SPW24N60C3 Infineon,code:24N60C3
SPW24N60C3 MOSFET N-Ch 650V 24.3A TO247-3 CoolMOS C3 Infineon Technologies
Manufacturer: Infineon
Product Category: MOSFET
Technology: Si
Mounting Style: Through Hole
Package/Case: TO-247-3
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds - Drain-Source Breakdown Voltage: 600 V
Id - Continuous Drain Current: 24.3 A
Rds On - Drain-Source Resistance: 160 mOhms
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage: 3.9 V
Qg - Gate Charge: 104.9 nC
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C
Pd - Power Dissipation: 240 W
Channel Mode: Enhancement
Tradename: CoolMOS
Brand: Infineon Technologies
Configuration: Single
Fall Time: 14 ns
Height: 21.1 mm
Length: 16.13 mm
Product Type: MOSFET
Rise Time: 21 ns
Series: CoolMOS C3
Subcategory: MOSFETs
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 140 ns
Typical Turn-On Delay Time: 13 ns
Width: 5.21 mm
Part # Aliases: SPW24N6C3XK SP000014695 SPW24N60C3FKSA1
Unit Weight: 6 g