Каталожен номер: 147024
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N-Chan.FET,OptiMOS,30V,50A,136W,<0.073om(50A),18/40nS,TO-252,code:PN0307,IPD50N03S2-07
N-channel - Enhancement mode
Manufacturer: Infineon
Product Category: MOSFET
Technology: Si
Mounting Style: SMD/SMT
Package/Case: TO-252-3
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Vds - Drain-Source Breakdown Voltage: 30 V
Id - Continuous Drain Current: 50 A
Rds On - Drain-Source Resistance: 7.3 mOhms
Vgs - Gate-Source Voltage: 20 V
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 175 C
Pd - Power Dissipation: 136 W
Configuration: Single
Channel Mode: Enhancement
Qualification: AEC-Q101
Tradename: OptiMOS
Height: 2.3 mm
Length: 6.5 mm
Transistor Type: 1 N-Channel
Width: 6.22 mm
Brand: Infineon Technologies
Fall Time: 30 ns
Product Type: MOSFET
Rise Time: 40 ns
Subcategory: MOSFETs
Typical Turn-Off Delay Time: 26 ns
Typical Turn-On Delay Time: 18 ns
Part # Aliases: IPD50N03S207ATMA1 IPD5N3S27XT SP000254462
N-channel - Enhancement mode
Manufacturer: Infineon
Product Category: MOSFET
Technology: Si
Mounting Style: SMD/SMT
Package/Case: TO-252-3
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Vds - Drain-Source Breakdown Voltage: 30 V
Id - Continuous Drain Current: 50 A
Rds On - Drain-Source Resistance: 7.3 mOhms
Vgs - Gate-Source Voltage: 20 V
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 175 C
Pd - Power Dissipation: 136 W
Configuration: Single
Channel Mode: Enhancement
Qualification: AEC-Q101
Tradename: OptiMOS
Height: 2.3 mm
Length: 6.5 mm
Transistor Type: 1 N-Channel
Width: 6.22 mm
Brand: Infineon Technologies
Fall Time: 30 ns
Product Type: MOSFET
Rise Time: 40 ns
Subcategory: MOSFETs
Typical Turn-Off Delay Time: 26 ns
Typical Turn-On Delay Time: 18 ns
Part # Aliases: IPD50N03S207ATMA1 IPD5N3S27XT SP000254462
N-Chan.FET,OptiMOS,30V,50A,136W,<0.073om(50A),18/40nS,TO-252,code:PN0307,IPD50N03S2-07
- Фабричен номер: IPD 50N03S2-07
- Производител Infineon
- Наличност: На склад
-
4.80 лв.
Свързани продукти
Фабричен номер: : CMD 50N03
N-Chan.MOS-FET,30V,50A,136W,<0.008om(50A),18/40nS,TO-252,CMD50N03
N-Chan.MOS-FET,30V,50A,136W,..