N-Chan.MOS-FET,650V,6A,45W,<0.95om(6.5A),25nS,TO-220F,Toshiba K6A65D
MOSFET N-Ch FET 650V 4.0s IDSS 10 uA .95 Ohm TK6A65D Toshiba,TK6A65D(STA4,Q,M)
9965-900-09805 Philips 357G06119080HF
Manufacturer: Toshiba
Product Category: MOSFET
RoHS: Details
Technology: Si
Mounting Style: Through Hole
Package/Case: TO-220-3
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds - Drain-Source Breakdown Voltage: 650 V
Id - Continuous Drain Current: 6 A
Rds On - Drain-Source Resistance: 1.11 Ohms
Vgs - Gate-Source Voltage: - 30 V, + 30 V
Vgs th - Gate-Source Threshold Voltage: 2 V
Qg - Gate Charge: 20 nC
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C
Pd - Power Dissipation: 45 W
Channel Mode: Enhancement
Tradename: MOSVII
Configuration: Single
Height: 15 mm
Length: 10 mm
Series: TK6A65D
Transistor Type: 1 N-Channel
Width: 4.5 mm
Brand: Toshiba
Product Type: MOSFET
Unit Weight: 1,700 g