N-channel enhan.mode,MegaMOS-FET,250V,62A,<35mom,390W,TO-264,Ixys IXTK62N25 N -channel MOSFET 62N25 62A 250V Ixys Product Category: MOSFET Manufacturer: IXYS RoHS: RoHS Compliant Details Technology: Si Mounting Style: Through Hole Package/Case: TO-264-3 Number of Channels: 1 Channel Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 250 V Id - Continuous Drain Current: 62 A Rds On - Drain-Source Resistance: 35 mOhms Vgs - Gate-Source Voltage: 20 V Minimum Operating Temperature: - 55 C Maximum Operating Temperature: + 150 C Packaging: Tube Channel Mode: Enhancement Brand: IXYS Configuration: Single Fall Time: 15 ns Height: 26.16 mm Length: 19.96 mm Pd - Power Dissipation: 390 W Rise Time: 25 ns Series: IXTK62N25 Factory Pack Quantity: 30 Transistor Type: 1 N-Channel Typical Turn-Off Delay Time: 115 ns Typical Turn-On Delay Time: 30 ns