N-Channel Power MOSFET 600V, 11/18A, 0.19Ω,59.5W, TO-220F ,Taiwan Semiconductor TSM60NB190CF C0G
MOSFET 600V, 18A, Single N-Channel Power MOSFET Taiwan Semiconductor TSM60NB190CF C0G
Manufacturer: Taiwan Semiconductor
Product Category: MOSFET
Technology: Si
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds - Drain-Source Breakdown Voltage: 600 V
Id - Continuous Drain Current: 18 A
Rds On - Drain-Source Resistance: 170 mOhms
Vgs - Gate-Source Voltage: - 30 V, + 30 V
Vgs th - Gate-Source Threshold Voltage: 2 V
Qg - Gate Charge: 32 nC
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C
Pd - Power Dissipation: 59.5 W
Channel Mode: Enhancement
Brand: Taiwan Semiconductor
Configuration: Single
Fall Time: 17 ns
Product Type: MOSFET
Rise Time: 34 ns
Subcategory: MOSFETs
Transistor Type: N-Channel Power MOSFET
Typical Turn-Off Delay Time: 26 ns
Typical Turn-On Delay Time: 11 ns
Part # Aliases: TSM60NB190CF