N-MOS-FET,L,100V,33A,130W,<133/135nS,<44mom,TO-220AB IR, IRF540N Infineon Technologies
INFINEON (IRF) IRF540NPBF,Транзистор: N-MOSFET; униполарен; HEXFET; 100V; 33A; 140W; TO220AB
Manufacturer: Infineon
Product Category: MOSFET
Technology: Si
Mounting Style: Through Hole
Package/Case: TO-220-3
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds - Drain-Source Breakdown Voltage: 100 V
Id - Continuous Drain Current: 33 A
Rds On - Drain-Source Resistance: 44 mOhms
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage: 2 V
Qg - Gate Charge: 47.3 nC
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 175 C
Pd - Power Dissipation: 140 W
Channel Mode: Enhancement
Brand: Infineon Technologies
Configuration: Single
Height: 15.65 mm
Length: 10 mm
Product Type: MOSFET
Subcategory: MOSFETs
Transistor Type: 1 N-Channel
Width: 4.4 mm
Part # Aliases: IRF540NPBF SP001561906
Unit Weight: 2 g