Каталожен номер: 149915
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N-MOS-FET,LogL 30V,1.2A,0.54W,<0.25om(0.96A), SOT-23 ,IR,code.B ,Infineon Technologies IRLML2803TRPBF
Infineon Technologies IRLML2803TRPBF -MOSFT 30V 1.2A 250mOhm 3.3nC LogLvl, SOT-23 ;code.B;
Manufacturer: Infineon
Product Category: MOSFET
Technology: Si
Mounting Style: SMD/SMT
Package/Case: SOT-23-3
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds - Drain-Source Breakdown Voltage: 30 V
Id - Continuous Drain Current: 1.2 A
Rds On - Drain-Source Resistance: 400 mOhms
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage: 1 V
Qg - Gate Charge: 3.3 nC
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 175 C
Pd - Power Dissipation: 540 mW
Channel Mode: Enhancement
Brand: Infineon Technologies
Configuration: Single
Height: 1.1 mm
Length: 2.9 mm
Product: MOSFET Small Signals
Product Type: MOSFET
Subcategory: MOSFETs
Transistor Type: 1 N-Channel
Width: 1.3 mm
Unit Weight: 8 mg
Infineon Technologies IRLML2803TRPBF -MOSFT 30V 1.2A 250mOhm 3.3nC LogLvl, SOT-23 ;code.B;
Manufacturer: Infineon
Product Category: MOSFET
Technology: Si
Mounting Style: SMD/SMT
Package/Case: SOT-23-3
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds - Drain-Source Breakdown Voltage: 30 V
Id - Continuous Drain Current: 1.2 A
Rds On - Drain-Source Resistance: 400 mOhms
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage: 1 V
Qg - Gate Charge: 3.3 nC
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 175 C
Pd - Power Dissipation: 540 mW
Channel Mode: Enhancement
Brand: Infineon Technologies
Configuration: Single
Height: 1.1 mm
Length: 2.9 mm
Product: MOSFET Small Signals
Product Type: MOSFET
Subcategory: MOSFETs
Transistor Type: 1 N-Channel
Width: 1.3 mm
Unit Weight: 8 mg
N-MOS-FET,LogL 30V,1.2A,0.54W,<0.25om(0.96A), SOT-23 ,IR,code.B ,Infineon Technologies IRLML2803TRPBF
- Фабричен номер: IRLML 2803 TRPBF
- Производител Infineon
- Само с доставка от 3 до 15 раб. дни в стандартните случаи.
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1.50 лв.