Power MOS-N-FET,560V,11/20A,250W,0.27Om(10A),21-76nS,TO-247 ,Vishay SiHG20N50C ,code: G20N50C
Mos Fet Transistor TO-247 ,Vishay SiHG20N50C ,code: G20N50C ,SIHG20N50C-E3
Manufacturer: Vishay
Product Category: MOSFETs
REACH - SVHC:
Technology: Si
Mounting Style: Through Hole
Package/Case: TO-247-3
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds - Drain-Source Breakdown Voltage: 500 V
Id - Continuous Drain Current: 19 A
Rds On - Drain-Source Resistance: 184 mOhms
Vgs - Gate-Source Voltage: - 30 V, + 30 V
Vgs th - Gate-Source Threshold Voltage: 4 V
Qg - Gate Charge: 46 nC
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C
Pd - Power Dissipation: 179 W
Channel Mode: Enhancement
Brand: Vishay Semiconductors
Configuration: Single
Fall Time: 25 ns
Height: 20.82 mm
Length: 15.87 mm
Product Type: MOSFETs
Rise Time: 27 ns
Series: SIHG E
Subcategory: Transistors
Typical Turn-Off Delay Time: 48 ns
Typical Turn-On Delay Time: 17 ns
Width: 5.31 mm
Unit Weight: 6 g