QFET-N-DMOS,800V,8A,59W,<1.55om(4A),TO-220F,FQPF8N80C Fairchild Manufacturer: ON Semiconductor Product Category: MOSFET Technology: Si Mounting Style: Through Hole Package/Case: TO-220FP-3 Number of Channels: 1 Channel Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 800 V Id - Continuous Drain Current: 8 A Rds On - Drain-Source Resistance: 1.55 Ohms Vgs - Gate-Source Voltage: 30 V Minimum Operating Temperature: - 55 C Maximum Operating Temperature: + 150 C Configuration: Single Pd - Power Dissipation: 59 W Channel Mode: Enhancement Tradename: QFET Height: 16.07 mm Length: 10.36 mm Series: FQPF8N80C Transistor Type: 1 N-Channel Type: MOSFET Width: 4.9 mm Brand: ON Semiconductor / Fairchild Forward Transconductance - Min: 5.6 S Fall Time: 70 ns Rise Time: 110 ns Typical Turn-Off Delay Time: 65 ns Typical Turn-On Delay Time: 40 ns Part # Aliases: FQPF8N80C_NL Unit Weight: 2,270 g