Каталожен номер: 22575

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MOS-N-FET-e,600V,5.8A,55W,<0.7om(2.9A),TO-220F,FQPF12N60 Fairchild
Fairchild,QFET,FQPF12N60/M E34
Manufacturer: ON Semiconductor
Product Category: MOSFET
Mounting Style: Through Hole
Package/Case: TO-220-3
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Vds - Drain-Source Breakdown Voltage: 600 V
Id - Continuous Drain Current: 5.8 A
Rds On - Drain-Source Resistance: 700 mOhms
Vgs - Gate-Source Voltage: 30 V
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C
Configuration: Single
Pd - Power Dissipation: 55 W
Channel Mode: Enhancement
Height: 16.3 mm
Length: 10.67 mm
Transistor Type: 1 N-Channel
Type: MOSFET
Width: 4.7 mm
Brand: ON Semiconductor / Fairchild
Forward Transconductance - Min: 6 S
Fall Time: 85 ns
Rise Time: 115 ns
Typical Turn-Off Delay Time: 95 ns
Typical Turn-On Delay Time: 30 ns
Part # Aliases: FQPF12N60_NL
Unit Weight: 2,125 g