V-MOS-N-FET,60V,50A,120W,<0.016om(32.5A),TO-220,FQP50N06 ON Semiconductor / Fairchild
MOSFET TO-220 N-CH 60V 50A ,FQP65N06 ON Semiconductor / Fairchild
Manufacturer: ON Semiconductor
Product Category: MOSFET
RoHS: Details
Technology: Si
Mounting Style: Through Hole
Package/Case: TO-220-3
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds - Drain-Source Breakdown Voltage: 60 V
Id - Continuous Drain Current: 50 A
Rds On - Drain-Source Resistance: 22 mOhms
Vgs - Gate-Source Voltage: - 25 V, + 25 V
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 175 C
Pd - Power Dissipation: 120 W
Channel Mode: Enhancement
Configuration: Single
Height: 16.3 mm
Length: 10.67 mm
Series: FQP50N06
Transistor Type: 1 N-Channel
Type: MOSFET
Width: 4.7 mm
Brand: ON Semiconductor / Fairchild
Forward Transconductance - Min: 22 S
Fall Time: 65 ns
Product Type: MOSFET
Rise Time: 105 ns
Subcategory: MOSFETs
Typical Turn-Off Delay Time: 60 ns
Typical Turn-On Delay Time: 15 ns
Part # Aliases: FQP50N06_NL
Unit Weight: 1,800 g