V-MOS-N-FET ,75V,82A,250W,<13mк(43A),TO-220,IR IRF2807PBF Infineon Technologies
Manufacturer: Infineon
Product Category: MOSFET
Technology: Si
Mounting Style: Through Hole
Package/Case: TO-220-3
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds - Drain-Source Breakdown Voltage: 75 V
Id - Continuous Drain Current: 82 A
Rds On - Drain-Source Resistance: 13 mOhms
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage: 2 V
Qg - Gate Charge: 106.7 nC
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 175 C
Pd - Power Dissipation: 200 W
Channel Mode: Enhancement
Brand: Infineon Technologies
Configuration: Single
Height: 15.65 mm
Length: 10 mm
Product Type: MOSFET
Subcategory: MOSFETs
Transistor Type: 1 N-Channel
Width: 4.4 mm
Part # Aliases: IRF2807PBF SP001550978
Unit Weight: 2 g