Каталожен номер: 169746
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V-MOS-N-FET,100V,17A,70W,<0.09om(8.4A),TO-220,IRF530N IR
Manufacturer: Infineon
Product Category: MOSFET
Technology: Si
Mounting Style: Through Hole
Package/Case: TO-220-3
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds - Drain-Source Breakdown Voltage: 100 V
Id - Continuous Drain Current: 17 A
Rds On - Drain-Source Resistance: 90 mOhms
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage: 2 V
Qg - Gate Charge: 24.7 nC
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 175 C
Pd - Power Dissipation: 79 W
Channel Mode: Enhancement
Configuration: Single
Height: 15.65 mm
Length: 10 mm
Transistor Type: 1 N-Channel
Width: 4.4 mm
Brand: Infineon Technologies
Product Type: MOSFET
Subcategory: MOSFETs
Unit Weight: 6 g
Manufacturer: Infineon
Product Category: MOSFET
Technology: Si
Mounting Style: Through Hole
Package/Case: TO-220-3
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds - Drain-Source Breakdown Voltage: 100 V
Id - Continuous Drain Current: 17 A
Rds On - Drain-Source Resistance: 90 mOhms
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage: 2 V
Qg - Gate Charge: 24.7 nC
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 175 C
Pd - Power Dissipation: 79 W
Channel Mode: Enhancement
Configuration: Single
Height: 15.65 mm
Length: 10 mm
Transistor Type: 1 N-Channel
Width: 4.4 mm
Brand: Infineon Technologies
Product Type: MOSFET
Subcategory: MOSFETs
Unit Weight: 6 g
V-MOS-N-FET,100V,17A,70W,<0.09om(8.4A),TO-220,IRF530N IR
- Фабричен номер: IRF 530 N
- Производител IR
- Наличност: На склад
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1.80 лв.