V-MOS-N-FET,100V,17A,70W,<0.09om(8.4A),TO-263/D2Pak-SMD ,Infineon IRF530NS
Mos Fet Transistor Infineon IRF530NS F530NS N-CHANNEL MOSFET, 100V 17A, D2PAK
Manufacturer: Infineon
Product Category: MOSFET
REACH - SVHC:
Technology: Si
Mounting Style: SMD/SMT
Package/Case: D2PAK-3 (TO-263-3)
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds - Drain-Source Breakdown Voltage: 100 V
Id - Continuous Drain Current: 17 A
Rds On - Drain-Source Resistance: 90 mOhms
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage: 4 V
Qg - Gate Charge: 37 nC
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 175 C
Pd - Power Dissipation: 3.8 W
Channel Mode: Enhancement
Configuration: Single
Fall Time: 25 ns
Forward Transconductance - Min: 12 S
Height: 2.3 mm
Length: 6.5 mm
Product Type: MOSFET
Rise Time: 22 ns
Subcategory: MOSFETs
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 35 ns
Typical Turn-On Delay Time: 9.2 ns
Width: 6.22 mm
Unit Weight: 330 mg