Каталожен номер: 165529
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V-MOS-N-FET,200V,9A,30W,<0.4om(5.4A),TO-220FP,IRF630FI STMicroelectronics Manufacturer: STMicroelectronics Product Category: MOSFET RoHS: Details Technology: Si Mounting Style: Through Hole Package/Case: TO-220FP-3 Number of Channels: 1 Channel Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 200 V Id - Continuous Drain Current: 9 A Rds On - Drain-Source Resistance: 400 mOhms Vgs - Gate-Source Voltage: 20 V Minimum Operating Temperature: - 65 C Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 30 W Configuration: Single Channel Mode: Enhancement Height: 9.3 mm Length: 10.4 mm Series: IRF630FP Transistor Type: 1 N-Channel Width: 4.6 mm Brand: STMicroelectronics Product Type: MOSFET Rise Time: 15 ns Factory Pack Quantity: 50 Subcategory: MOSFETs Typical Turn-On Delay Time: 10 ns Unit Weight: 330 mg
V-MOS-N-FET,200V,9A,30W,<0.4om(5.4A),TO-220FP,IRF630FI STMicroelectronics
- Фабричен номер: IRF 630 FP
- Производител STM
- Наличност: На склад
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