V-MOS-N-FET,250V,38A,280W,<0.075om(28A),TO-247AC,IRFP264 IR,Vishay / Siliconix
IRFP264N IR,Vishay / Siliconix
Manufacturer: Vishay
Product Category: MOSFET
RoHS: Details
Technology: Si
Mounting Style: Through Hole
Package/Case: TO-247-3
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds - Drain-Source Breakdown Voltage: 250 V
Id - Continuous Drain Current: 38 A
Rds On - Drain-Source Resistance: 75 mOhms
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage: 2 V
Qg - Gate Charge: 210 nC
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C
Pd - Power Dissipation: 280 W
Channel Mode: Enhancement
Configuration: Single
Series: IRFP
Transistor Type: 1 N-Channel
Brand: Vishay Semiconductors
Forward Transconductance - Min: 20 S
Fall Time: 92 ns
Product Type: MOSFET
Rise Time: 99 ns
Subcategory: MOSFETs
Typical Turn-Off Delay Time: 110 ns
Typical Turn-On Delay Time: 22 ns
Unit Weight: 4,600 g