V-MOS-N-FET,250V,44A,310W,<0.046om(28A),TO-247AC, IRFP4229PBF Infineon IRFP4229
Transistors;IRFP264N IR,Vishay / Siliconix;TO-247AC, IRFP4229PBF Infineon IRFP4229
Manufacturer: Infineon
Product Category: MOSFET
Technology: Si
Package/Case: TO-247-3
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds - Drain-Source Breakdown Voltage: 250 V
Id - Continuous Drain Current: 44 A
Rds On - Drain-Source Resistance: 46 mOhms
Vgs - Gate-Source Voltage: - 30 V, + 30 V
Vgs th - Gate-Source Threshold Voltage: 1.8 V
Qg - Gate Charge: 72 nC
Minimum Operating Temperature: - 40 C
Maximum Operating Temperature: + 175 C
Pd - Power Dissipation: 310 W
Channel Mode: Enhancement
Configuration: Single
Height: 20.7 mm
Length: 15.87 mm
Transistor Type: 1 N-Channel
Width: 5.31 mm
Brand: Infineon / IR
Forward Transconductance - Min: 83 S
Fall Time: 19 ns
Product Type: MOSFET
Rise Time: 27 ns
Factory Pack Quantity: 400
Subcategory: MOSFETs
Typical Turn-Off Delay Time: 44 ns
Typical Turn-On Delay Time: 25 ns
Part # Aliases: IRFP4229PBF SP001578046
Unit Weight: 38 g