V-MOS-N-FET,60V,60A,150W,<0.016om(30A),TO-220,STP60NE06-16 STMicroelectronics ,code:P60NE06-16 P 60NE06-16;MOSFET N-Ch 60 Volt 60 Amp STP60NE06-16 STMicroelectronics Manufacturer: STMicroelectronics Product Category:MOSFET RoHS: Details Technology:Si Mounting Style:Through Hole Package/Case:TO-220-3 Number of Channels:1 Channel Transistor Polarity:N-Channel Vds - Drain-Source Breakdown Voltage:60 V Id - Continuous Drain Current:60 A Rds On - Drain-Source Resistance:16 mOhms Vgs - Gate-Source Voltage:20 V Minimum Operating Temperature:- 65 C Maximum Operating Temperature:+ 175 C Pd - Power Dissipation:150 W Configuration:Single Channel Mode:Enhancement Height:9.15 mm Length:10.4 mm Series:STP60NE06 Transistor Type:1 N-Channel Width:4.6 mm Brand:STMicroelectronics Fall Time:150 ns Product Type:MOSFET Rise Time:125 ns Subcategory:MOSFETs Typical Turn-On Delay Time:40 ns Unit Weight:330 mg