Каталожен номер: 151341
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IGBT-N chan,1200V,60A,175W,Tf=14nS,TO-247,STMicroelectronics GW30N120KD
code:GW30N120KD,STGW30N120KD 30 A - 1200 V - short circuit rugged IGBT
This IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior.
Manufacturer: STMicroelectronics
Product Category: IGBT Transistors
RoHS: Details
Technology: Si
Package/Case: TO-247-3
Mounting Style: Through Hole
Configuration: Single
Collector- Emitter Voltage VCEO Max: 1200 V
Maximum Gate Emitter Voltage: 25 V
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 125 C
Series: STGW30N120KD
Packaging: Tube
Continuous Collector Current Ic Max: 60 A
Height: 20.15 mm
Length: 15.75 mm
Width: 5.15 mm
Brand: STMicroelectronics
Product Type: IGBT Transistors
Subcategory: IGBTs
Unit Weight: 38 mg
code:GW30N120KD,STGW30N120KD 30 A - 1200 V - short circuit rugged IGBT
This IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior.
Manufacturer: STMicroelectronics
Product Category: IGBT Transistors
RoHS: Details
Technology: Si
Package/Case: TO-247-3
Mounting Style: Through Hole
Configuration: Single
Collector- Emitter Voltage VCEO Max: 1200 V
Maximum Gate Emitter Voltage: 25 V
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 125 C
Series: STGW30N120KD
Packaging: Tube
Continuous Collector Current Ic Max: 60 A
Height: 20.15 mm
Length: 15.75 mm
Width: 5.15 mm
Brand: STMicroelectronics
Product Type: IGBT Transistors
Subcategory: IGBTs
Unit Weight: 38 mg
IGBT-N chan,1200V,60A,175W,Tf=14nS,TO-247,STMicroelectronics GW30N120KD
- Фабричен номер: STGW 30N120 KD
- Производител STM
- Наличност: На склад
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10.56 лв.