IGBT-N chan,600V,80A,195W,Tf=37nS(125°C),TO-247,Fairchild code: G80N60 UFD,SGH80N60UFDTU
SGH80N60UFDTU IGBT Transistors N-CH/100V/0.58/28A, TO3P,ON Semiconductor / Fairchild
Manufacturer: ON Semiconductor
Product Category: IGBT Transistors
RoHS: Details
Technology: Si
Package/Case: TO-3P-3
Mounting Style: Through Hole
Configuration: Single
Collector- Emitter Voltage VCEO Max: 600 V
Collector-Emitter Saturation Voltage: 2.1 V
Maximum Gate Emitter Voltage: 20 V
Continuous Collector Current at 25 C: 80 A
Pd - Power Dissipation: 195 W
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C
Series: SGH80N60UFD
Continuous Collector Current Ic Max: 80 A
Height: 18.9 mm
Length: 15.8 mm
Width: 5 mm
Brand: ON Semiconductor / Fairchild
Continuous Collector Current: 80 A
Gate-Emitter Leakage Current: +/- 100 nA
Product Type: IGBT Transistors
Subcategory: IGBTs
Unit Weight: 6,401 g