Каталожен номер: 145544

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Това обаче не променя техните основни свойства.

IGBT-N chan,reverse conduct.,1200V,40A(25°C)/20A(110°C),310W,Tf=454nS(150°C),TO-247,code: H20R1203 ,Infineon IHW20N120R3
IHW20N120R3,marking:H20R1203 Infineon
IHW20N120R3,marking:H20R1203 Infineon,IGBT N-Ch+DIODE Vces=1200V Ic=40A 310W IHW20N120R3-H20R1203 IGBT
Manufacturer: Infineon
Product Category: IGBT Transistors
RoHS: Details
Technology: Si
Package/Case: TO-247-3
Mounting Style: Through Hole
Configuration: Single
Collector- Emitter Voltage VCEO Max: 1200 V
Collector-Emitter Saturation Voltage: 1.48 V
Maximum Gate Emitter Voltage: 20 V
Continuous Collector Current at 25 C: 40 A
Pd - Power Dissipation: 310 W
Minimum Operating Temperature: - 40 C
Maximum Operating Temperature: + 175 C
Series: RC
Brand: Infineon Technologies
Continuous Collector Current: 40 A
Gate-Emitter Leakage Current: 100 nA
Product Type: IGBT Transistors
Subcategory: IGBTs
Tradename: TRENCHSTOP
Part # Aliases: SP000437702 IHW2N12R3XK IHW20N120R3FKSA1
Unit Weight: 6,056 g

IGBT-N chan,reverse conduct.,1200V,40A(25°C)/20A(110°C),310W,Tf=454nS(150°C),TO-247,code: H20R1203 ,Infineon IHW20N120R3

Фабричен номер: IHW 20N120 R3
Производител Infineon
Наличност: На склад

15.00 лв.

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Свързани продукти

Фабричен номер: : H 20R1203

IGBT-N chan,reverse conduct.,1200V,40A(25°C)/20A(110°C),310W,Tf=454nS(150°C),TO-247,H20R1203 Infineon

IGBT-N chan,reverse conduct.,1200V,40A(25°C)/20A(110°C),310W,Tf=454nS(150°C),TO-247,H20R1203 Infineo..

15.00 лв.