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IHW20N135R3,marking:H20R1353 Infineon,IGBT N-Ch+DIODE Vces=1350V Ic=40A 310W TO-247
Manufacturer: Infineon
Product Category: IGBT Transistors
RoHS: Details
Technology: Si
Package/Case: TO-247-3
Mounting Style: Through Hole
Configuration: Single
Collector- Emitter Voltage VCEO Max: 1350 V
Collector-Emitter Saturation Voltage: 1.6 V
Maximum Gate Emitter Voltage: +/- 20 V
Continuous Collector Current at 25 C: 40 A
Pd - Power Dissipation: 310 W
Minimum Operating Temperature: - 40 C
Maximum Operating Temperature: + 175 C
Series: RC
Brand: Infineon Technologies
Gate-Emitter Leakage Current: 100 nA
Product Type: IGBT Transistors
Subcategory: IGBTs
Tradename: TRENCHSTOP
Part # Aliases: IHW20N135R3FKSA1 IHW2N135R3XK SP000909532
Unit Weight: 6 g
IGBT-N channel ,reverse conduct.,1350V,25A(25°C)/10A(110°C),310W,Tf=454nS(150°C),TO-247 ,YGW 25N135 F1 JXCWGOO
- Фабричен номер: YGW 25N135 F1
- Производител China
- Само с доставка от 3 до 15 раб. дни в стандартните случаи.
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10.00 лв.
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