Каталожен номер: 66915
Снимките на продуктите са с илюстративно предназначение и могат да се различават от действителния изглед на предмета.
Това обаче не променя техните основни свойства.
IGBT-N chan,600V,10A,16A(25°C),75W,Tf=36-158nS,TO-220AC,10N60-Infineon
Manufacturer: ON Semiconductor
Product Category: IGBT Transistors
RoHS: Details
Technology: Si
Package/Case: TO-220-3
Mounting Style: Through Hole
Configuration: Single
Collector- Emitter Voltage VCEO Max: 600 V
Collector-Emitter Saturation Voltage: 2.2 V
Maximum Gate Emitter Voltage: +/- 20 V
Continuous Collector Current at 25 C: 16 A
Pd - Power Dissipation: 75 W
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C
Series: SGP10N60RUFD
Packaging: Tube
Continuous Collector Current Ic Max: 16 A
Height: 9.4 mm
Length: 10.1 mm
Width: 4.7 mm
Brand: ON Semiconductor / Fairchild
Continuous Collector Current: 16 A
Gate-Emitter Leakage Current: +/- 100 nA
Manufacturer: ON Semiconductor
Product Category: IGBT Transistors
RoHS: Details
Technology: Si
Package/Case: TO-220-3
Mounting Style: Through Hole
Configuration: Single
Collector- Emitter Voltage VCEO Max: 600 V
Collector-Emitter Saturation Voltage: 2.2 V
Maximum Gate Emitter Voltage: +/- 20 V
Continuous Collector Current at 25 C: 16 A
Pd - Power Dissipation: 75 W
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C
Series: SGP10N60RUFD
Packaging: Tube
Continuous Collector Current Ic Max: 16 A
Height: 9.4 mm
Length: 10.1 mm
Width: 4.7 mm
Brand: ON Semiconductor / Fairchild
Continuous Collector Current: 16 A
Gate-Emitter Leakage Current: +/- 100 nA
IGBT-N chan,600V,10A,16A(25°C),75W,Tf=36-158nS,TO-220AC,10N60-ONS
- Фабричен номер: SGP 10N60 RUFD
- Производител ONS
- Само с доставка от 3 до 15 раб. дни в стандартните случаи.
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5.52 лв.