Снимките на продуктите са с илюстративно предназначение и могат да се различават от действителния изглед на предмета.
Това обаче не променя техните основни свойства.-
Manufacturer: Infineon
Technology: Si
Package/Case: TO-247-3
Mounting Style: Through Hole
Configuration: Single
Collector- Emitter Voltage VCEO Max: 600 V
Collector-Emitter Saturation Voltage: 1.95 V
Maximum Gate Emitter Voltage: - 20 V, 20 V
Continuous Collector Current at 25 C: 60 A
Pd - Power Dissipation: 187 W
Minimum Operating Temperature: - 40 C
Maximum Operating Temperature: + 175 C
Series: HighSpeed 3
Brand: Infineon Technologies
Gate-Emitter Leakage Current: 100 nA
Product Type: IGBT Transistors
Subcategory: IGBTs
Tradename: TRENCHSTOP
Part # Aliases: SP000852242 IGW3N6H3XK IGW30N60H3FKSA1
Unit Weight: 6g
IGBT-N chan,600V,60A,30A(100°C),187W,Tf=18-207nS, TO-247 ,code: G30H603 , Infineon IGW30N60H3FKSA1
- Фабричен номер: IGW 30N60 H3FKSA1
- Производител Infineon
- Наличност: На склад
-
18.00 лв.
Свързани продукти
MOS-N-FET,L,600V,60A(25°C),160W,40/103ns,TO-247AC,code: G4PC40S,IR/Infineon IRG4PC40SPBF
MOS-N-FET,L,600V,60A(25°C),160W,40/103ns,TO-247AC,code: G4PC40S,IR/Infineon IRG4PC40SPBFcode: G4PC4..
24.00 лв.
MOS-N-FET,L,600V,40A(25°C),160W,8-40kHz,>200kHz in rezonant mode,TO-247AC,code:G4PC40U,IR/Infineon IRG4PC40UPBF
MOS-N-FET,L,600V,40A(25°C),160W,8-40kHz,>200kHz in rezonant mode,TO-247AC,code:G4PC40U,IR/Infineon I..
20.00 лв.
MOS-N-FET,L,600V,40A(25°C),160W,49/174ns,TO-247AC,code: G4PC40W,IR/Infineon IRG4PC40WPBF
MOS-N-FET,L,600V,40A(25°C),160W,49/174ns,TO-247AC,code: G4PC40W,IR/Infineon IRG4PC40WPBF;BUP 604;GN ..
20.00 лв.
IGBT-N ch.,600V,55A(25°C),200W,90/177ns,TO-247AC,code: G4PC50W ,IR /Infineon IRG4PC50WPBF
IGBT-N ch.,600V,55A(25°C),200W,90/177ns,TO-247AC,code: G4PC50W ,IR /Infineon IRG4PC50WPBFcode: G4PC5..
22.00 лв.
IGBT-N-ch MOSFET,1000V,50A,156W,0.10uS,TO-3PLH,code:50N322A ,GT50J101 Toshiba
IGBT-N-ch MOSFET,1000V,50A,156W,0.10uS,TO-3PLH,code:50N322A ,GT50J101 ToshibaGT50J101 TRANSISTORS..
52.80 лв.
IGBT-N-ch MOSFET,600V,50A,200W,0.20uS,TO-3PLH,code:50J102 , GT50J102 Toshiba
IGBT-N-ch MOSFET,600V,50A,200W,0.20uS,TO-3PLH,code:50J102 , GT50J102 Toshiba GT50J102 TRANSISTORS IG..
78.00 лв.
MOS-N-FET ,L,600V,50A(25°C),202W,156/536ns,TO-247AC,Motorola MGW30N60
MOS-N-FET ,L,600V,50A(25°C),202W,156/536ns,TO-247AC,Motorola MGW30N60MGW30N60 TRANSISTORS ,BUP 604, ..
IGBT-N ch.,600V,30A(25°C),187W,90/177ns,TO-247AC,code: G30H603 ,IR /Infineon IGW30N60H3FKSA1
IGBT-N ch.,600V,30A(25°C),187W,90/177ns,TO-247AC,code: G30H603 ,IR /Infineon IGW30N60H3FKSA1code: G4..
18.00 лв.