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Каталожен номер: 22850
  • MOS-N-FET,L,600V,60A(25°C),160W,40/103ns,TO-247AC,code: G4PC40S,IR/Infineon  IRG4PC40SPBF
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  • MOS-N-FET,L,600V,60A(25°C),160W,40/103ns,TO-247AC,code: G4PC40S,IR/Infineon  IRG4PC40SPBF
MOS-N-FET,L,600V,60A(25°C),160W,40/103ns,TO-247AC,code: G4PC40S,IR/Infineon IRG4PC40SPBF
code: G4PC40S,IR/Infineon IRG4PC40SPBF,GBT Transistors 600V DC-1 KHZ (STD) DISCRETE IGBT
Manufacturer: Infineon
Product Category: IGBT Transistors
Technology: Si
Package/Case: TO-247-3
Mounting Style: Through Hole
Configuration: Single
Collector- Emitter Voltage VCEO Max: 600 V
Collector-Emitter Saturation Voltage: 1.5 V
Maximum Gate Emitter Voltage: 20 V
Continuous Collector Current at 25 C: 60 A
Pd - Power Dissipation: 160 W
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C
Brand: Infineon / IR
Continuous Collector Current Ic Max: 60 A
Height: 20.3 mm
Length: 15.9 mm
Product Type: IGBT Transistors
Subcategory: IGBTs
Width: 5.3 mm
Unit Weight: 38 g

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MOS-N-FET,L,600V,60A(25°C),160W,40/103ns,TO-247AC,code: G4PC40S,IR/Infineon IRG4PC40SPBF

  • Фабричен номер: IRG 4PC40 SPBF
  • Производител IR
  • Само с доставка от 3 до 15 раб. дни в стандартните случаи.
  • 24.00 лв.


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