Каталожен номер: 161267
Снимките на продуктите са с илюстративно предназначение и могат да се различават от действителния изглед на предмета.
Това обаче не променя техните основни свойства.-
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IGBT-N chan,600V,9A,25W,Tf=33-108nS,TO-220FP,code: GF10N60KD STMicroelectronics STGF10NC60KD
Manufacturer: STMicroelectronics
Product Category: IGBT Transistors
RoHS: Details
Technology: Si
Package/Case: TO-220-3 FP
Mounting Style: Through Hole
Configuration: Single
Collector- Emitter Voltage VCEO Max: 600 V
Collector-Emitter Saturation Voltage: 2 V
Maximum Gate Emitter Voltage: +/- 20 V
Pd - Power Dissipation: 25 W
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C
Series: 600-650V IGBTs
Packaging: Tube
Continuous Collector Current Ic Max: 9 A
Height: 9.3 mm
Length: 10.4 mm
Width: 4.6 mm
Brand: STMicroelectronics
Continuous Collector Current: 6 A
Gate-Emitter Leakage Current: 100 nA
Manufacturer: STMicroelectronics
Product Category: IGBT Transistors
RoHS: Details
Technology: Si
Package/Case: TO-220-3 FP
Mounting Style: Through Hole
Configuration: Single
Collector- Emitter Voltage VCEO Max: 600 V
Collector-Emitter Saturation Voltage: 2 V
Maximum Gate Emitter Voltage: +/- 20 V
Pd - Power Dissipation: 25 W
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C
Series: 600-650V IGBTs
Packaging: Tube
Continuous Collector Current Ic Max: 9 A
Height: 9.3 mm
Length: 10.4 mm
Width: 4.6 mm
Brand: STMicroelectronics
Continuous Collector Current: 6 A
Gate-Emitter Leakage Current: 100 nA
IGBT-N chan,600V,9A,25W,Tf=33-108nS,TO-220FP,code: GF10N60KD STMicroelectronics STGF10NC60KD
- Фабричен номер: STGF 10NC60 KD
- Производител STM
- Само с доставка от 3 до 15 раб. дни в стандартните случаи.
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6.00 лв.