IGBT-N chan,SMPS-ser.,600V,54A(25°C)/56A(110°C),167W,Tf=38nS(150°C),TO-247,12N60A4D Fairchild ON Semiconductor / Fairchild HGTG12N60A4D IGBT Single Transistor, General Purpose, 54 A, 2.7 V, 167 W, 600 V, TO-247 Manufacturer:ON Semiconductor Product Category:IGBT Transistors RoHS: Details Technology:Si Package/Case:TO-247-3 Mounting Style:Through Hole Configuration:Single Collector- Emitter Voltage VCEO Max:600 V Collector-Emitter Saturation Voltage:2 V Maximum Gate Emitter Voltage:20 V Continuous Collector Current at 25 C:54 A Pd - Power Dissipation:167 W Minimum Operating Temperature:- 55 C Maximum Operating Temperature:+ 150 C Series:HGTG12N60A4D Continuous Collector Current Ic Max:54 A Height:20.82 mm Length:15.87 mm Width:4.82 mm Brand:ON Semiconductor / Fairchild Continuous Collector Current:60 A Gate-Emitter Leakage Current:+/- 250 nA Product Type:IGBT Transistors Subcategory:IGBTs Part # Aliases:HGTG12N60A4D_NL Unit Weight:6,390 g