MOS-N-FET-e, 200V, 96A, 600W,Qg=145nS,0.24mOm,-55...+175°C ,TO-3P , Ixys IXTQ96N20P
Transistor MOSFET 96 Amps 200V 0.024 Rds TO-3P , Ixys IXTQ96N20P
Manufacturer: IXYS
Product Category: MOSFET
Technology: Si
Mounting Style: Through Hole
Package/Case: TO-3P-3
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds - Drain-Source Breakdown Voltage: 200 V
Id - Continuous Drain Current: 96 A
Rds On - Drain-Source Resistance: 24 mOhms
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage: 2.5 V
Qg - Gate Charge: 145 nC
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 175 C
Pd - Power Dissipation: 600 W
Channel Mode: Enhancement
Series: IXTQ96N20
Brand: IXYS
Configuration: Single
Fall Time: 30 ns
Product Type: MOSFET
Rise Time: 30 ns
Subcategory: MOSFETs
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 75 ns
Typical Turn-On Delay Time: 28 ns
Unit Weight: 5,500 g