Каталожен номер: 172792
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Това обаче не променя техните основни свойства.-
MOS-N-IGBT+Di,HiPerFAST,600V,60A,75A-at 25°C,380W,Tf=50nS,40-100kHz,TO-247 Ixys IXGH60N60C3D1
Ixys IXGH60N60C3D1 IGBT-N Silicon Modules 60 Amps 600V, 60 A,75A-at 25°C, 3 V,380 W, 600 V, TO-247, 3 Pins
Manufacturer: IXYS
Product Category: IGBT Modules
RoHS: Details
Product: IGBT Silicon Modules
Collector-Emitter Saturation Voltage: 600 V
Continuous Collector Current at 25 C: 75 A
Gate-Emitter Leakage Current: 100 nA
Pd - Power Dissipation: 380 W
Package/Case: TO-247AD-3
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C
Brand: IXYS
Height: 21.46 mm
Length: 16.26 mm
Maximum Gate Emitter Voltage: 20 V
Mounting Style: Through Hole
Product Type: IGBT Modules
Series: IXGH60N60
Subcategory: IGBTs
Technology: Si
Tradename: GenX3
Width: 5.3 mm
Unit Weight: 1,600 g
Ixys IXGH60N60C3D1 IGBT-N Silicon Modules 60 Amps 600V, 60 A,75A-at 25°C, 3 V,380 W, 600 V, TO-247, 3 Pins
Manufacturer: IXYS
Product Category: IGBT Modules
RoHS: Details
Product: IGBT Silicon Modules
Collector-Emitter Saturation Voltage: 600 V
Continuous Collector Current at 25 C: 75 A
Gate-Emitter Leakage Current: 100 nA
Pd - Power Dissipation: 380 W
Package/Case: TO-247AD-3
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C
Brand: IXYS
Height: 21.46 mm
Length: 16.26 mm
Maximum Gate Emitter Voltage: 20 V
Mounting Style: Through Hole
Product Type: IGBT Modules
Series: IXGH60N60
Subcategory: IGBTs
Technology: Si
Tradename: GenX3
Width: 5.3 mm
Unit Weight: 1,600 g
MOS-N-IGBT+Di,HiPerFAST,600V,60A,75A-at 25°C,380W,Tf=50nS,40-100kHz,TO-247 Ixys IXGH60N60C3D1
- Фабричен номер: IXGH 60N60 C3D1
- Производител Ixys
- Само с доставка от 3 до 15 раб. дни в стандартните случаи.
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21.60 лв.