MOS-N-IGBTi+Di, HiPerFAST,B2-Class High Speed 600V,16A,40A-at 25°C,150W,Tf=50nS,40-100kHz,TO-247 Ixys IXGH16N60B2D1
Ixys IXGH16N60B2D1 IGBT-N Silicon Modules 16 Amps 600V, 16 A,40A-at 25°C, 3 V,1500 W, 600 V, TO-247, 3 Pins
Manufacturer: IXYS
Product Category: IGBT Modules
Product: IGBT Silicon Modules
Collector-Emitter Saturation Voltage: 600 V
Continuous Collector Current at 25 C: 40 A
Gate-Emitter Leakage Current: 100 nA
Pd - Power Dissipation:  150 W
Package/Case: TO-247AD-3
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C
Brand: IXYS
Height: 21.46 mm
Length: 16.26 mm
Maximum Gate Emitter Voltage: 20 V
Mounting Style: Through Hole
Product Type: IGBT Modules
Series: IXGH16N60
Subcategory: IGBTs
Technology: Si
Tradename: GenX3
Width: 5.3 mm
Unit Weight: 6.0 gram