MOS-P-FET,V-MOS,LogL,60V,1.9A,1.8W,<0.3oHm,SOT-223,Infineon BSP171P Infineon BSP75/BSP171PH6327XTSA1 MOSFET P-Ch -60V 1.9A SOT-223-3 Manufacturer: Infineon Product Category: MOSFET Mounting Style: SMD/SMT Package/Case: PG-SOT-223-4 Transistor Polarity: P-Channel Number of Channels: 1 Channel Vds - Drain-Source Breakdown Voltage: 60 V Id - Continuous Drain Current: 1.9 A Rds On - Drain-Source Resistance: 300 mOhms Vgs - Gate-Source Voltage: - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage: 1.5 V Qg - Gate Charge: 13 nC Minimum Operating Temperature: - 55 C Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 1.8 W Channel Mode: Enhancement Configuration: Single Height: 1.6 mm Length: 6.5 mm Series: BSP171 Transistor Type: 1 P-Channel Width: 3.5 mm Brand: Infineon Technologies Forward Transconductance - Min: 1.4 S Fall Time: 87 ns Product Type: MOSFET Rise Time: 25 ns Typical Turn-Off Delay Time: 208 ns Typical Turn-On Delay Time: 6 ns Unit Weight: 120 mg